Focuslight Technologies launches diode laser system for wafer annealing

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DLightS provides continuous energy output up to 1,800W/mm2, achieving >95% beam uniformity and >98% output power stability.

Focuslight Technologies has launched DLightS series Diode Laser System for laser wafer annealing.

This system combines eutectic bonding technology, thermal management and thermal stress control technology for photon generation and beam transformation and beam homogenization technology for photon control.  

DLightS generates 70μm, extremely narrow line laser beam with an aspect ratio of 160:1.

Such laser system provides continuous energy output up to 1,800W/mm2, which can achieve > 95% beam uniformity and > 98% output power stability.

At the same time, it also has additional functions such as processing temperature monitoring and in-situ detection of output beam quality.

Laser annealing is one of the indispensable key processes in the manufacturing of logic chip manufacturing with 28nm technology node and below. Such process heats the wafer surface atomic layer to more than 1,000°C in less than 1 millisecond, and then cools rapidly, to effectively reduce wafer electrode defects in the process, and to improve product performance and production yield.

With the development of semiconductor manufacturing technology and the improvement of Very-large-scale integration (VLSI) design and manufacturing capacity, laser annealing technology has gradually replaced traditional furnace annealing and has become the mainstream technology in the field of semiconductor manufacturing. Compared with the conventional annealing technology, laser annealing has a lot of advantages, such as selective heating, closed-loop temperature control, high power density and stable energy output. It is suitable for various annealing processes such as uniform temperature annealing, peak annealing, and flash annealing.

More information can be found here.

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